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Ding Hongzhi, Zhao Rubao, Xing Xiusan, Zhu Hesun. A Kinetic Model of Dielectric Ageing[J]. JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 1996, 5(1): 55-62.
Citation: Ding Hongzhi, Zhao Rubao, Xing Xiusan, Zhu Hesun. A Kinetic Model of Dielectric Ageing[J]. JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 1996, 5(1): 55-62.

A Kinetic Model of Dielectric Ageing

  • A kinetic model of dielectric ageing is presented. The central finding of this investigation is that there is a power-law relationship between the local electric field concentration and the rate of defect-tip initiated conducting crack growth. By applying such a power-law conducting crack growth rate expression to the evaluation of the life of solid dielectrics, the empirical classical ageing law of insulation materials can be derived theoretically as a lobical result. All the results are universal and agree with the experimental data of oxide films.
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