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Zou Jian, Ding Hongzhi, Xing Xiusan. Dynamic Theory of Electric Breakdown for Oxides[J]. JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 1996, 5(2): 117-121.
Citation: Zou Jian, Ding Hongzhi, Xing Xiusan. Dynamic Theory of Electric Breakdown for Oxides[J]. JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 1996, 5(2): 117-121.

Dynamic Theory of Electric Breakdown for Oxides

  • The dynamic aspects of dielectric breakdown (DB) is studied in this article. A quantitative model based on impact ionization is presented. The formulae of microdefect growth rate and lifetime prediction are derived and show fair agreement with experimental data in SiO2. All the fitting parameters have definite physical meanings.
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