Deposition of High Quality GaN Film Under High ECR Plasma Density 

Aim To investigate the influence of ion density(ni)on the deposition of wurtzite GaN films on the substrate of α Al 2O3(0001)by electron cyclotron resonance plasma. Methods Langmuir probe measurement; Double crystal X ray diffraction and Hall measurement were used. Results The quality of GaN film strongly depended on its growth condition. The higher ion density resulted in a higher amount ratio of N/Ga and a lower background electron concentration of GaN film. When the GaN was prepared in the ion density of 2 0×10 11cm -3; the amount ratio of N/Ga was close to 1; the electron background density was 3 7×10 18 cm -3 and its full width at half magnitude(FWHM) was 16?arcmin. Conclusion The quality of GaN film can be improved by raising the plasma density.